COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
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This MOSFET has been designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
AEC Qualified | Yes |
---|---|
Compliance (Only Automotive(Q) supports PPAP) | Standard |
Polarity | N+P |
ESD Diodes (Y|N) | No |
|VDS| (V) | 12, 12 V |
|VGS| (±V) | 8, 8 ±V |
|IDS| @TA = +25°C (A) | 5.6, 3.8 |
PD @TA = +25°C (W) | 1.4 |
RDS(ON)Max@ VGS(4.5V)(mΩ) | 29, 61 mΩ |
RDS(ON)Max@ VGS(2.5V)(mΩ) | 34, 81 mΩ |
RDS(ON)Max@ VGS(1.8V)(mΩ) | 44, 115 mΩ |
|VGS(TH)| Min (V) | 0.4, 0.4 V |
|VGS(TH)| Max (V) | 1, 1 V |
QG Typ @ |VGS| = 4.5V (nC) | 10.5, 10.7 nC |
QG Typ @ |VGS| = 10V (nC) | 19.6, 17.9 (@8V) nC |
CISS Typ (pF) | 914, 915 pF |
CISS Condition @|VDS| (V) | 6,6 V |