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DMPH4013SPSW

40V +175°C P-Channel Enhancement Mode MOSFET

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Description

This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.

Feature(s)

  • Rated to +175°C – Ideal for High Ambient Temperature Environments
  • 100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application
  • Low On-Resistance
  • Fast Switching Speed
  • Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • An automotive-compliant part is available under separate datasheet (DMPH4013SPSWQ)

Application(s)

  • Reverse polarity protections
  • BLDC motor controls
  • Power-management functions

Product Specifications

Product Parameters

AEC Qualified No
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity P
ESD Diodes (Y|N) No
|VDS| (V) 40 V
|VGS| (±V) 20 ±V
|IDS| @TC = +25°C (A) 69
PD @TA = +25°C (W) 3.3
RDS(ON)Max@ VGS(10V)(mΩ) 13 mΩ
RDS(ON)Max@ VGS(4.5V)(mΩ) 23 mΩ
|VGS(TH)| Min (V) 1 V
|VGS(TH)| Max (V) 3 V
QG Typ @ |VGS| = 4.5V (nC) 39 nC
QG Typ @ |VGS| = 10V (nC) 87 nC
CISS Typ (pF) 4763 pF
CISS Condition @|VDS| (V) 20 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf