Diodes Incorporated — Analog and discrete power solutions
PowerDI5060 8

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details.

PowerDI5060-8.png
Back to MOSFET Master Table

DMTH10H032LPSWQ

100V +175°C Dual N-Channel Enhancement Mode MOSFET

Contact Sales

Log in or register to manage email notifications about changes to datasheets or PCNs for this part.

Description

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: synchronous rectifiers, backlighting, power management functions, and DC-DC converters.

Feature(s)

  • 100% Unclamped Inductive Switching (UIS) Test in Production —

Ensures More Reliable and Robust End Application

  • High Conversion Efficiency
  • Low Input Capacitance
  • Fast Switching Speed
  • Wettable Flank for Improved Optical Inspection
  • Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • The DIODES™ DMTH10H032LPSWQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://www.diodes.com/quality/product-definitions/

Application(s)

  • Synchronous rectifiers
  • Backlighting
  • Power management functions
  • DC-DC converters

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Automotive
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 100 V
|VGS| (±V) 20 ±V
|IDS| @TC = +25°C (A) 33
PD @TA = +25°C (W) 3.4
PD @TC = +25°C (W) 68
RDS(ON)Max@ VGS(10V)(mΩ) 32 mΩ
RDS(ON)Max@ VGS(4.5V)(mΩ) 50 mΩ
|VGS(TH)| Min (V) 1.3 V
|VGS(TH)| Max (V) 2.5 V
QG Typ @ |VGS| = 4.5V (nC) 6.3 nC
QG Typ @ |VGS| = 10V (nC) 11.9 nC
CISS Typ (pF) 683 pF
CISS Condition @|VDS| (V) 50 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf