Diodes Incorporated — Analog and discrete power solutions
PowerDI5060 8

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DMTH41M3SPSWQ

40V 175?C N-Channel Enhancement Mode MOSFET

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Description

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP, and is ideal for use in: engine-management systems, body control electronics, and DC-DC converters.

Feature(s)

  • Rated to +175°C – Ideal for High Ambient Temperature Environments
  • 100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application
  • High Conversion Efficiency
  • Low RDS(ON) – Minimizes Power Losses
  • < 1.1mm Package Profile – Ideal for Thin Applications
  • Wettable Flank for Improved Optical Inspection
  • Fast Switching Speed
  • Low Input Capacitance
  • Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • The DMTH41M3SPSWQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF16949 certified facilities. https://www.diodes.com/quality/product-definitions/

Application(s)

  • Engine-management systems
  • Body control electronics
  • DC-DC converters

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Automotive
Polarity N
ESD Diodes (Y|N) No
|VDS| (V) 40 V
|VGS| (±V) 20 ±V
|IDS| @TA = +25°C (A) -
|IDS| @TC = +25°C (A) 191
PD @TA = +25°C (W) 3.75
PD @TC = +25°C (W) 114
RDS(ON)Max@ VGS(10V)(mΩ) 1.7 mΩ
RDS(ON)Max@ VGS(4.5V)(mΩ) - mΩ
RDS(ON)Max@ VGS(2.5V)(mΩ) - mΩ
RDS(ON)Max@ VGS(1.8V)(mΩ) - mΩ
|VGS(TH)| Min (V) 2 V
|VGS(TH)| Max (V) 4 V
QG Typ @ |VGS| = 4.5V (nC) - nC
QG Typ @ |VGS| = 10V (nC) 61 nC
CISS Typ (pF) 5433 pF
CISS Condition @|VDS| (V) 20 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf