DMTH8008SPSW

80V +175°C N-Channel Enhancement Mode MOSFET

Datasheet

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Description

This new generation MOSFET is designed to minimize R_DS(ON)yet maintain superior switching performance. This device is ideal for use in power management and load switches.

Feature(s)

Rated to +175°C — Ideal for High Ambient Temperature Environments
100% Unclamped Inductive Switching (UIS) Test in Production — Ensures More Reliable and Robust End Application
High Conversion Efficiency
Low R_DS(ON)— Minimizes On-State Losses
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
An automotive-compliant part is available under separate datasheet (DMTH8008SPSWQ)

Application(s)

DC-DC converters
Load switches

Specifications & Technical Documents

Product Parameters

AEC Qualified	No
Compliance (Only Automotive Supports PPAP)	Standard
Polarity	N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	80 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_C = +25°C (A)	92
P_D @T_A = +25°C (W)	3.4
P_D @T_C = +25°C (W)	100
R_DS(ON)Max@ V_GS(10V)(mΩ)	7.8 mΩ
\|V_GS(TH)\| Min (V)	2 V
\|V_GS(TH)\| Max (V)	4 V
Q_G Typ @ \|V_GS\| = 10V (nC)	34 nC
C_ISS Typ (pF)	1950 pF
C_ISS Condition @\|V_DS\| (V)	40 V

Technical Documents

Recommended Soldering Techniques

TN1.pdf