NPN, 60V, 5.5A, PowerDI3333-8
Contact Sales
Log in or register to manage email notifications about changes to datasheets or PCNs for this part.
A proprietary structure is used in achieving ultra-low VCE(sat) performance and reduced operating temperature. This has the benefit of reducing thermal management requirements and increasing longterm reliability.
| Category | Ultra Low Saturation Transistor |
|---|---|
| Compliance(Only Automotive supports PPAP) | Standard |
| Polarity | NPN |
| VCEO, VCES (V) | 60 |
| IC (A) | 5.5 |
| ICM (A) | 12 |
| PD (W) | 2 |
| hFE (Min) | 250 |
| hFE (@ IC) (A) | 0.1 |
| hFE(Min 2) | 200 |
| hFE (@ IC2) (A) | 2 |
| VCE(sat) Max (mV) | 100 |
| VCE(SAT) (@ IC/IB) (A/mA) | 2/40 |
| VCE(sat) (Max.2) (mV) | 220 |
| VCE(sat) (@ IC/IB2) (A/mA) | 5.5/150 |
| fT (MHz) | 200 |
| RCE(sat) (mΩ) | 24 |
| Spice Model | Yes |
